Bi(2-x)SbxTe3 Thermoelectric Composites with High Average zT Values: From Materials to Devices

Zhiliang Li; Xiaofeng Yang; Qing Wang; Hongxia Zhang; Zhihai Ding; Qian Cao; Xin Qian; Jianglong Wang; Shufang Wang

doi:10.54227/mlab.20220026

Article navigation > Materials Lab > 2022 > 1, 220026

Zhiliang Li, Xiaofeng Yang, Qing Wang, Hongxia Zhang, Zhihai Ding, et al. Bi(2-x)SbxTe3 Thermoelectric Composites with High Average zT Values: From Materials to Devices. Materials Lab 2022, 1, 220026. doi: 10.54227/mlab.20220026

Citation:

Zhiliang Li, Xiaofeng Yang, Qing Wang, Hongxia Zhang, Zhihai Ding, et al. Bi_(2-x)Sb_xTe₃ Thermoelectric Composites with High Average zT Values: From Materials to Devices. Materials Lab 2022, 1, 220026. doi: 10.54227/mlab.20220026

Research Article

Bi_(2-x)Sb_xTe₃ Thermoelectric Composites with High Average zT Values: From Materials to Devices

More Information

1.
Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China
2.
Huabei Cooling Device Co., Ltd, Xianghe 065400, China
3.
Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
Corresponding author: sfwang@hbu.edu.cn

Abstract

Abstract

(Bi,Sb)Te-based materials have drawn extensive attention for nearly two centuries as one of the most successful commercial thermoelectric (TE) materials. However, Bi_(2-x)Sb_xTe₃ composites with remarkable average figure of merit (zT_avg) values are highly desired in terms of the great contribution on expanding the applying temperature ranges of the commercial devices. Herein, Bi_0.35Sb_1.65Te₃ compound with outstanding zT_avg value of about 1.18 (integrate from 298 to 498 K) was obtained via delaying the bipolar effect by precipitating multi-scale Sb₂Te₃ inclusions. The power factor (PF) was enhanced from 2.1×10⁻³Wm⁻¹K⁻² (Bi_0.5Sb_1.5Te₃) to 4.3×10⁻³Wm⁻¹K⁻² (Bi_0.35Sb_1.65Te₃) by optimizing the carrier concentration from 1.9×10¹⁹cm⁻³ to 3.9×10¹⁹ cm⁻³ via adjusting the proportions of Bi:Sb. Correspondingly, the lattice thermal conductivities ($ {\kappa }_{l} $) were distinctly suppressed by the additional multiple phonon scattering resulting from the Sb₂Te₃ precipitates. Consequently, a remarkable zT_max, as high as ~1.35 at 373 K was obtained in the Bi_0.35Sb_1.65Te₃ sample. The temperature difference ($ \Delta $T, 6.0 A current) of the TE device that assembled with the commercial N-type Bi(Te,Se) ingot has reached up to 66.9 K. The high zT_avg, zT_max and $ \Delta $T values will further promote the commercial applications of (Bi,Sb)Te-based materials in a wide temperature range.
- Thermoelectric performance /
- Average figure of merit /
- Bismuth telluride /
- Nano-inclusion /
- Thermoelectric device
Information

Received Date: 17 April 2022

Revised Date: 20 May 2022

Accepted Date: 29 May 2022

Publish Date: 12 July 2022

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