| Citation: |
Bingchao Qin, Dongrui Liu, Qian Cao, Xiao Zhang, Li-Dong Zhao. SnSe crystalline thermoelectrics[J]. Materials Lab. doi: 10.54227/mlab.20230029
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SnSe crystalline thermoelectrics
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Abstract
Thermoelectric materials are increasingly crucial in addressing energy challenges for enabling conversion between heat and electricity. Crystalline tin selenide (SnSe) has gained significant attention since 2014 when its high-temperature thermoelectric performance was first reported. Based on unique characteristics in phonon and electron transports, numerous investigations have been conducted to promote the development of SnSe crystals for low- to mid-temperature waste recovery and electronic cooling applications. Herein, we concisely summarize the significant advancements for SnSe crystalline thermoelectrics, covering material performance optimization and full-scale thermoelectric device development. We then emphasize that the multiple valence bands and high in-plane carrier mobility promote high-performance p-type materials. Additionally, we highlight the critical role of three-dimensional (3D) charge and two-dimensional (2D) phonon transports for promising n-type out-of-plane conduction. Finally, personal insights into future research directions of enhancing performance of SnSe materials and devices are proposed, with the goal of advancing their practical applications.
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Keywords:
- crystalline SnSe /
- thermoelectric /
- band structure /
- carrier mobility
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Author Biographies
Bingchao Qin received his Ph.D. degree in the School of Materials Science and Engineering from Beihang University, China, in 2023, under the supervision of Prof. Li-Dong Zhao. He is currently a postdoctoral researcher at Beihang University. His research focuses on improving the performance and efficiency of crystalline SnSe based thermoelectric materials and devices, promoting the practical application of wide-bandgap SnSe crystals in both power generation and electronic cooling. 
Xiao Zhang is an associate professor at Beihang University, China. She received her Ph.D. Degree in Materials Science and Engineering from Beihang University in 2018. She worked at Chongqing University as assistant Professor from 2018 to 2020. She joined Beihang University and began her postdoctoral research in 2020. She then joined the Research Institute for Frontier Science of Beihang University as an associate professor in 2022. Her main research interests focus on electrical transport, thermal transport, and thermoelectric materials and devices. 
Li-Dong Zhao is a full professor of the School of Materials Science and Engineering at Beihang University, China. He received his Ph.D. degree from the University of Science and Technology Beijing, China in 2009. He was a postdoctoral research associate at the Université Paris-Sud and Northwestern University from 2009 to 2014. His research interests include electrical and thermal transport behaviors in the compounds with layered structures. He has authored over 270 peer-reviewed publications in international journals with an h-index of 87. Professor Zhao has been identified as Highly Cited Researchers by Clarivate (2019-2023). Group website: http://shi.buaa.edu.cn/zhaolidong/zh_CN/index.htm. -
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Bingchao Qin, Dongrui Liu, Qian Cao, Xiao Zhang, Li-Dong Zhao. SnSe crystalline thermoelectrics[J]. Materials Lab. doi: 10.54227/mlab.20230029
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Figure 1.
Timeline of the significant achievements for SnSe crystalline thermoelectrics. a Undoped SnSe exhibits exceptional ZTmax ~2.6, originating from extremely low thermal conductivity and strong anharmonicity.[35] b p-type SnSe crystals with continuous achievements on both room-temperature ZT and ZTave along the in-plane direction through the utilization of multiple valence bands transport,[36] promotion of multiband synglisis,[38] and implementation of lattice plainification strategy,[40] respectively. c n-type SnSe crystals with continuous achievements on both ZTmax and ZTave in the out-of-plane direction by utilizing 3D charge and 2D phonon transports,[37] and manipulating layered phonon-electron decoupling,[39] respectively.
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Figure 2.
ZTave (300-773 K) of typical p-type crystalline SnSe samples along out-of-plane and in-plane directions.[35, 36, 38, 40]
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Figure 3.
Schematic of the Lattice Plainification Strategy. The intrinsic defects in materials strongly scatter carriers and impede carrier transport. Lattice plainification by fixing lattice defects could improve carrier mobility and electrical properties, contributing to high-ranged TE performance especially near room temperature.[40, 57]
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Figure 4.
ZTave (300-773 K) of typical n-type crystalline SnSe samples along in-plane and out-of-plane directions.[37, 39, 60, 61]
