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Ferroelectric Engineering Advances Thermoelectric Materials
Published as part of the Virtual Special Issue "Merocuri Kanatzidis at 65"
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Abstract
It is commonly believed that wide band gap ferroelectrics are electrically insulating and can hardly be promising thermoelectric materials. However, things could be different if their gaps are reduced while the ferroelectricity is well reserved. Here we propose that the exploration of narrow band gap semiconductors with ferroelectric characteristic might lead to simultaneous optimization of electrical and thermal transport properties for advanced thermoelectric materials. Narrow gap endows the materials with good dopability, which is a prerequisite for high electrical conductivity. In the meanwhile, ferroelectricity-induced Rashba band splitting and lattice softening would yield large Seebeck coefficient and low thermal conductivity, respectively. Altogether, excellent thermoelectric performance can be expected in the narrow gap ferroelectric semiconductors (NGFS). We also propose the design principles of potential NGFSs.
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Keywords:
- Thermoelectrics /
- Ferroelectricity /
- Rashba effect /
- Lattice softening
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Author Biographies
Yuting Fan is currently a PhD student working on thermoelectric materials at Wuhan University of Technology (WUT), under the supervision of Prof. Gangjian Tan. She received her Master degree from WUT in 2019. Her research interests focus on design and optimization of advanced GeTe-based thermoelectric materials. 
Gangjian Tan is now a full professor of materials science at Wuhan University of Technology (WUT), China. He received his Ph.D. degree from WUT in 2013. Following that, he worked as a postdoctoral research fellow at Northwestern University, Evanston till 2018. He is interested in the understanding of electron, phonon and ionic transport behaviors in solids for energy conversion and storage. He has authored over 80 peer-reviewed publications in international journals with an h-index of 39. -
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Figure 1.
Strategies that boost the thermoelectric performance of hole-doped PbTe.[20-23]
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Figure 2.
Ferroelectricity leads to Rashba band splitting and lattice instability (phonons softening).
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Figure 3.
Simultaneous optimization of three key physical parameters (S, σ and κ) in narrow gap ferroelectric semiconductors and remarkably improved ZT values by ferroelectric engineering.
