| Citation: |
Chao Li, Yi Wu, Yi-Xin Zhang, Jun Guo, Jing Feng, et al. Bi2S3 as a Promising Thermoelectric Material: Back and Forth. Materials Lab 2022, 1, 220014. doi: 10.54227/mlab.20220014
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Bi2S3 as a Promising Thermoelectric Material: Back and Forth
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Abstract
Thermoelectric conversion technology based on thermoelectric materials can directly convert heat and electricity and is extensively used in waste heat recovery, semiconductor refrigeration, and space exploration. Currently, bismuth telluride (Bi2Te3) thermoelectric materials are the best in terms of room-temperature performance and have been commercialized. Compared with commercial Bi2Te3 thermoelectric materials of the same family (III-VI group), bismuth sulfide (Bi2S3) thermoelectric materials have the unique advantages of being abundant, low-cost, and environmentally friendly. However, the thermoelectric properties of Bi2S3 are limited by its low electrical conductivity. In recent years, with the development of preparation methods and characterization tools, many studies have emerged to improve the thermoelectric properties of Bi2S3 materials. Herein, the preparation of Bi2S3 thermoelectric materials and the implications of the process on their thermoelectric properties are summarized. The advances made in composition, structure and other strategies to optimize the thermoelectric properties of Bi2S3 are highlighted, and the current challenges for the development of Bi2S3 thermoelectric materials and potential future research directions are also discussed.
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Keywords:
- Bi2S3 /
- thermoelectric /
- nanorods /
- electrical conductivity
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Author Biographies
Chao Li is studying for his Master degree with Prof. Zhen-Hua Ge at Faculty of Materials Science and Engineering from Kunming University of Science and Technology. His research interests focus on preparation and optimization of thermoelectric materials. 
Yi Wu received his B.Eng. degree (2020) in Materials Science and Engineering from Kunming University of Science and technology under the direction of Professor Zhen-Hua Ge. His research focuses primarily on design and optimization of Bi2S3 based thermoelectric materials. 
Yi-Xin Zhang is a Ph.D student with Prof. Zhen-Hua Ge at Faculty of Materials Science and Engineering at Kunming University of Science and Technology. He received his M.E. degree in Materials Science at Kunming University of Science and Technology. His research focuses on the synthesis and characterization of chalcogenide thermoelectric materials, especially copper sulfides and copper selenides. 
Jun Guo is a Ph.D student with Prof. Zhen-Hua Ge at Faculty of Materials Science and Engineering at Kunming University of Science and Technology. His research direction is mainly focused on the design and synthesis in thermoelectric materials with high electric transport properties and/or low thermal conductivity, and effcient photocatalysts. 
Jing Feng is a full professor at Kunming University of Science and Technology. He received his Ph.D. degree in 2012 from University of Science and Technology Kunming, China. And he worked as post-doctoral researcher at University of Harvard University from 2012 to 2014. His research interests focus on ceramic thermal barrier coating material. 
Zhen-Hua Ge is a full professor at Kunming University of Science and Technology. He received his Ph.D. degree in 2013 from University of Science and Technology Beijing, China. And he worked as post-doctoral researcher at University of South Florida and Southern University of Science and Technology from February 2013 to July 2015. His research interests focus on synthesis and properties improvements of thermoelectric materials, especially for sulfides thermoelectric materials. -
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Received Date:
27 February 2022
Accepted Date:
15 March 2022
Publish Date:
12 July 2022
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Chao Li, Yi Wu, Yi-Xin Zhang, Jun Guo, Jing Feng, et al. Bi2S3 as a Promising Thermoelectric Material: Back and Forth. Materials Lab 2022, 1, 220014. doi: 10.54227/mlab.20220014
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Figure 1.
Diagram of a temperature differential power unit and a cooling unit.
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Figure 2.
(a) The abundance of various elements employed in thermoelectric materials. (b) The price of elements compared with that of 99.99% Te powder (200 mesh). (c) The LD50 values of elements normally employed in thermoelectric materials. [28]
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Figure 3.
The crystal structure of Bi2S3.
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Figure 4.
Calculated electronic band structure and projected density of states (DOS) for Bi2S3 without spin orbital coupling (SOC) considered. The vertical red lines refer to valence band maximum (VBM) and conduction band minimum (CBM). The black dashed line refers to Fermi level. [46]
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Figure 5.
Experimental measured
$ {\mathit{C}}_{\mathit{p}} $ $ {\mathit{C}}_{\mathit{p}} $ -
Figure 6.
Sample morphology and XRD patterns of Bi2S3 prepared by solid-phase melting. Reproduced with permission.[82]
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Figure 7.
Sample morphology of Bi2S3 prepared by hydrothermal method.[94]
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Figure 8.
Preparation process of Bi@Bi2S3 core-shell nanostructures. [95]
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Figure 9.
(a) Phase diagram of the Bi2Te3–Bi2Se3–Bi2S3 system. (b) Hall carrier concentration, (c) weighted mobility, and (d) lattice thermal conductivity of the Bi2Te3–Bi2Se3–Bi2S3 system. [106]
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Figure 10.
Schematic diagram of interstitial atom, vacancy, replacement atom and Secondary phase.
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Figure 11.
Diagram of the thermoelectric properties of solution halogen-doped Bi2S3. [46]
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Figure 12.
Design and physical drawing of thermoelectric power generation device prepared by solution halogen-doped Bi2S3 and its performance characteristics. Reproduced with permission.[46] Copyright 2021, Wiley-VCH.
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Figure 13.
Optimization of the thermoelectric properties of Bi2S3 by PbBr2 doping and multiple nanoprecipitates. [31]
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Figure 14.
Mechanism (a), preparation method (b) and microstructure (c) of modulated doped Bi2S3. [144]
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Figure 15.
(a) (b) Schematic diagram and microstructure of highly textured bulk Bi2S3 prepared by sintering of (001) oriented Bi2S3 nanorods prepared by the hydrothermal method. [45, 94] (c) Bi2S3 nanocomposite sintered from Bi2S3@Bi core-shell nanowires prepared by the hydrothermal method. [85].
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Figure 16.
Design, preparation and characterization of electronic fast channels. [150]
