| Citation: |
Yi-Xin Zhang, Zhen-Hua Ge. The stability of copper sulfides thermoelectric materials[J]. Materials Lab. doi: 10.54227/mlab.20230017
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The stability of copper sulfides thermoelectric materials
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Abstract
The stability of thermoelectric materials is critical in determining their suitability for commercial device applications. Copper sulfides are superionic conductors with highly disordered Cu ions, which results in exceptional thermoelectric properties at high temperature. However, this feature also causes unbalanced Cu ions concentration as well as the poor service stability under external fields. Researchers are focusing on enhancing the service stability of copper-based superionic conductors. This perspective reviews the mechanisms of Cu ions migration, metal deposition, and materials degradation of copper sulfides. The importance of appropriately inhibiting long-range migration of Cu ions is emphasized. Based on an analysis of the effects of multiple scaled ion-blocking barriers on ion, carrier and phonon transportation, some rational approaches for improving service stability of copper sulfides while maintaining their thermoelectric performance are proposed, which would increase the possibility of utilizing copper sulfides in thermoelectric device applications.
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Author Biographies
Yi-Xin Zhang is a Ph.D student with Prof. Zhen-Hua Ge at Faculty of Materials Science and Engineering at Kunming University of Science and Technology. He received his M.E. degree in Materials Science at Kunming University of Science and Technology. His research focuses on the synthesis and characterization of chalcogenide thermoelectric materials, especially copper sulfides and copper selenides. 
Zhen-Hua Ge is a full professor at Kunming University of Science and Technology. He received his Ph.D. degree in 2013 from University of Science and Technology Beijing, China. And he worked as post-doctoral researcher at University of South Florida and Southern University of Science and Technology from February 2013 to July 2015. His research interests focus on synthesis and properties improvements of thermoelectric materials, especially for sulfides thermoelectric materials. -
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Yi-Xin Zhang, Zhen-Hua Ge. The stability of copper sulfides thermoelectric materials[J]. Materials Lab. doi: 10.54227/mlab.20230017
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Figure 1.
Dimensionless figure of merit ZT for binary copper sulfide-based thermoelectric materials as a function of temperature and year. The data were taken from[11, 14, 20-53].
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Figure 2.
Schematic of a steady state of copper sulfides without ion directional long-range migration (and without metal deposition) and b continuous metal deposition (or other decomposition), if the local Cu ion concentration reaches a critical level for the materials[54]. Copyright 2018, Springer Nature. c Critical voltage (Vc) and ZT at 750 K as a function of Cu vacancy content (δ) for Cu2-δS (0≤δ≤0.2), Cu1.8FexS (x=0.024, 0.036, 0.048 and 0.064), Cu1.9FexS (x=0.0125, 0.0225 and 0.0325) and high-current SPSed Cu1.8S specimens are included for comparison. d Time dependence of relative electrical resistance (R/R0) for the pure Cu2S, Cu1.97S and Cu2SI0.1 samples under a large current density (12 A cm−2) at 573 K [38]. Copyright 2020, Elsevier. e R/R0 of Cu1.8S and Cu1.8S-B bulk composite as a function of time under a current density 12 A cm−2 at 573 K[47]. Copyright 2022, Elsevier.
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Figure 3.
Multiscale ion-blocking barriers in the copper sulfides. Sketch map of Cu ion diffusion in the framework of copper sulfides at high temperature when a atomic-scale defects (immobile ions or Cu vacancies), b nanoprecipitates, c interfacial scale barriers and d macroscopic partition ion-blocking barriers are introduced. e Schematic of improving stability of copper sulfides by simultaneously introducing multiscale ion-blocking barriers.
