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This cover highlights the dual-functional role of thermoelectric material in energy conversion system, particularly in sustainable power generation and solid-state thermal management. Tin sulfide, a low-cost thermoelectric semiconductor, exhibits unique electron-phonon transport characteristics governed by its anisotropic layered crystal structure. Strategic lattice modulation can not only decipher the electron-phonon coupling mechanisms at the atomic scale, but also establish a theoretical framework for performance optimization. The perspective particularly focuses on point defect engineering paradigms in SnS crystals. Heterovalent substitution-induced defects enable simultaneous improvement of electrical conductivity (increased carrier concentration) and thermopower (Seebeck coefficient) through its inherent multi-band electronic structure. Alloying-derived defects synergistically tailor the electronic band structures and modify phonon dispersion relations. The atom-scale lattice modulation not only reveals electron-phonon decoupling in SnS system, but also proposes a universal defect engineering methodology applicable to various functional materials.

Xiaojun Li,  Wenke He*,  Li-Dong Zhao* 

2025, 4, 240010. doi: 10.54227/mlab.20240010